February.23, 2009
Wideband amplifier MMIC*2 SMA3101
Industry's highest*1 gain of 25dB achieved
| Product Name | SMA3101 |
|---|---|
| Sample Shipping | March 2009 |
| Production Plan | 1M/month from June 2009 3M/month from June 2010 |
| Sample Price | $1.00 |
SANYO Semiconductor Co., Ltd. has developed a wideband amplifier MMIC SMA3101 for IF*3 stage aimed at down-converter (LNB*4) for satellite reception. The MMIC SMA3101 has achieved the industry's highest gain characteristics by using a wide range of circuit simulation technology and high performance of the bipolar transistor created with our unique silicon wafer technology process. Sanyo's aim is to grow in the international market by providing solution proposals for LNB devices such as transistors for local oscillators and diode for mixers.
*1 As of February 23, 2009
*2 MMIC (Monolithic Microwave IC) is an IC for amplification, oscillation and mixing of microwave.
*3 Stands for Intermediate Frequency.
A signal located between transmitting and receiving signal and low frequency data signal.
*4 Stands for Low Noise Block. Carrier Frequency 10.7 to 12.75 GHz, IF Frequency 0.95 to 2.15GHz.
Product Main Features
- Industry's highest gain (Gp=25dB) achieved over a wide range (f=0.1 to 2.2GHz)
• Power gain Gp = 25dB (3dB increased from conventional products).
• Output power P1dB = -4dBm.
• Output intercept point OIP3=6.5dBm (When f=2.2GHz). - High frequency operation of 3GHz
•Upper limit of operating frequency is 3GHz.
•Input-output matching can be performed by internal circuit.
•No external adjusting parts. - Developed from environmentally-friendly and low-cost silicon materials
•Toxic free silicon materials used in production of LNB (Local oscillators, mixers and IF amplifiers).
•Proposal of LNB solution simplifies development and contributes to reducing cost.
Specifications
| Product Name |
Package Name (Size) [mm] |
Supply Voltage Vcc [V] |
Circuit Current Icc [mA] |
Power Gain Gp [dB] |
Operating Frequency Range fu [GHz] |
1dB Gain Compression Point Output Power Po(1dB) [dBm] |
Output Intercept Point OIP3 [dBm] |
|---|---|---|---|---|---|---|---|
| Vcc=5V f=2.2GHz |
Vcc=5V 3dB lower (vs. 1GHz gain) |
Vcc=5V f=2.2GHz |
Vcc=5V f=2.2GHz |
||||
| SMA3101 | MCPH6 (2.0×2.1×0.85) |
5 | 10 | 25 | 3.0 | -4 typ. | 6.5 typ. (Reference value) |
*Package drawing (unit: mm)
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*The information presented in this press release, including device specifications, is current as of the date of this press release. Note, however, that this information is subject to change without notice and thus at later dates the current state may differ in certain details from the content presented here.
