July.17, 2009

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Product	Low-loss bipolar transistor ECH series
Parts No.	ECH8101, ECH8102, ECH8201, ECH8202, ECH8901
Sample Order	July 2009
Production Plan	August 2009, 1M pcs/month
Sample Price	US $0.50

  Sanyo Semiconductor Co., Ltd. announces the development of five new models of the Low-Loss Bipolar Transistor ECH Series, which are best suitable for flat-panel displays and mobile device applications.

  By utilizing Sanyo's unique package and wafer technology, this new ECH series achieves the industry's lowest^*1 power loss (55% of reduction compared with conventional products) among SOT23 class (2.9mm × 2.8mm) bipolar transistors as well as achieving the industry's largest^*1 12A current rating.

  The new ECH series package size has been greatly minimized while providing superior performance. It achieves a reduction of 94%^*2 in package materials and can be mounted on very small board space which contributes to space saving in end products.

  Five models are available in the new ECH series. The first four models are single-type PNP/NPN bipolar transistors which are used for IGBT gate driving circuits in solar batteries power conditioners and non-stopping power supply devices. They are ideal for power lines' switching circuits, DC motor driving circuits and similarly circuit applications. The fifth model is a composite-type (Pch MOSFET + bipolar transistor) that is ideal for cell phone charging switches.

1. Industry's lowest^*1 power loss
2. Industry's highest^*1 current rating
3. Environment friendly small package

*1: As of July 17^th 2009, comparison among SOT23 class (2.9mm × 2.8mm).
*2: Comparison with TO-252 class (6.5mm × 9.5mm) of equivalent performance.

1. Industry's lowest^*1 power loss
     Sanyo's is the first in the industry to adopt the Clip Bonding Technology to the new ECH series bipolar transistor. Replacing Au wires with a Cu plate leads to decreasing the package resistance by 80%. Combined with the MBIT-W (Multi-Base Island Transistor - Wireless) process, the new ECH series achieves a 55% reduction in power loss compared with conventional highest-performance SOT23 class (2.9mm × 2.8mm) products. The combination of these technologies approximately reduces heat generation by a half and effectively prevents temperature increase.
   

   

   *3: VCE(sat) is a voltage applied between collector and emitter for assuring IC=2A at the time of IB=100mA.
   Power loss is calculated by VCE(sat) × I_C. Smaller the VCE(sat), lower the power loss.

2. Industry's highest^*1 current rating
     Utilizing Sanyo's unique 2-layer electrode MBIT-W (Multi-Base Island Transistor - Wireless) process, the effective operating area is improved, and a large Clip Bonding Pad is formed. As a result, a current rating of 12A (2.4 times^*1 higher then current products) is achieved, which is the highest current rating in the industry among the SOT23 class.
   

   

3. Environment friendly small package
     To achieve same performance as the new ECH series with current product (TO-252 class (6.5mm × 9.5mm)) the mount area would have to be eight times as large. Furthermore, by using the new ECH series, package materials such as epoxy resin can be reduced by 94% due to its small package.
     Adopting Pb-free external leads, halogen-free package resin, along with the achievement of the energy saving due to its high performance, the new ECH series is environment friendly in all aspects.

BIP Single Type

Type No.	Polarity	VCEO [V]	IC [A]	PD [W]	VCE(sat)
					IC[A]	IB[mA]	typ[mV]	max[mV]
ECH8102	PNP	-30	-12	1.6*5	-2	-40	-50	-85
ECH8202	NPN	30	12		2	40	35	50
ECH8101	PNP	-50	-10		-2	-40	-70	-120
ECH8201	NPN	50	10		2	40	50	75

BIP+MOS Composite Type

Type No.	Polarity	VCEO/ VDSS [V]	IC/ID [A]	PD [W]	VCE(sat)				RDS(on)
					IC [A]	IB [mA]	typ [mV]	max [mV]	VGSS [V]	ID [A]	typ [mΩ]	max [mΩ]
ECH8901	PNP	-30	-3	1.3*5	-1.5	-75	-90	-135	-	-	-	-
	Pch	-12	-4		-	-	-	-	-2.5	-1.5	31	45

*5 When mounted on ceramic board (1000mm²×0.8mm)

*The information presented in this press release, including device specifications, is current as of the date of this press release. Note, however, that this information is subject to change without notice and thus at later dates the current state may differ in certain details from the content presented here.

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